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STM8L151F3P6 데이터시트(PDF) 58 Page - STMicroelectronics |
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STM8L151F3P6 데이터시트(HTML) 58 Page - STMicroelectronics |
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58 / 112 page ![]() Electrical parameters STM8L151x2, STM8L151x3 58/112 Doc ID 018780 Rev 4 Figure 13. Typ. IDD(Wait) vs. VDD,fCPU =16MHz 1) 1. Typical current consumption measured with code executed from Flash memory. 2. For temperature range 3. 3. Flash is configured in IDDQ mode in Wait mode by setting the EPM or WAITM bit in the Flash_CR1 register. 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 27. 5. Tested in production. 6. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD HSE) must be added. Refer to Table 28. 500 550 600 650 700 750 800 850 900 950 1000 1.6 2.1 2.6 3.1 3.6 VDD [V] -40°C 25°C 90°C 130°C ai18214 |
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