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STM8L152M8 데이터시트(PDF) 94 Page - STMicroelectronics |
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STM8L152M8 데이터시트(HTML) 94 Page - STMicroelectronics |
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94 / 134 page ![]() Electrical parameters STM8L15xx8, STM8L15xR6 94/134 DocID17943 Rev 6 Flash memory Table 36. Flash program and data EEPROM memory Symbol Parameter Conditions Min. Typ. Max. (1) Unit VDD Operating voltage (all modes, read/write/erase) fSYSCLK = 16 MHz 1.65 3.6 V tprog Programming time for 1 or 128 bytes (block) erase/write cycles (on programmed byte) 6 ms Programming time for 1 to 128 bytes (block) write cycles (on erased byte) 3 Iprog Programming/ erasing consumption TA=+25 °C, VDD = 3.0 V 0.7 mA TA=+25 °C, VDD = 1.8 V tRET(2) Data retention (program memory) after 10000 erase/write cycles at TA=−40 τ ο +85 °C (6 suffix) TRET=+85 °C 30(1) years Data retention (program memory) after 10000 erase/write cycles at TA=−40 τ ο +125 °C (3 suffix) TRET=+125 °C 5(1) Data retention (data memory) after 300000 erase/write cycles at TA=−40 τ ο +85 °C (6 suffix) TRET=+85 °C 30(1) Data retention (data memory) after 300000 erase/write cycles at TA=−40 τ ο +125 °C (3 suffix) TRET=+125 °C 5(1) NRW (3) Erase/write cycles (program memory) TA=−40 τ ο +85 °C (6 suffix), TA=−40 τ ο +105 °C (7 suffix) or TA=−40 τ ο +125 °C (3 suffix) 10(1) kcycles Erase/write cycles (data memory) 300(1) (4) 1. Data based on characterization results, not tested in production. 2. Conforming to JEDEC JESD22a117 3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation addresses a single byte. 4. Data based on characterization performed on the whole data memory. |
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