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SCF5250LPV100 데이터시트(PDF) 13 Page - Freescale Semiconductor, Inc |
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SCF5250LPV100 데이터시트(HTML) 13 Page - Freescale Semiconductor, Inc |
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13 / 56 page ![]() SCF5250 Data Sheet: Technical Data, Rev. 1.3 Freescale Semiconductor 13 3.2.2 Read-Write Control This signal indicates during any bus cycle whether a read or write is in progress. A low is write cycle and a high is a read cycle. 3.2.3 Output Enable The OE signal is intended to be connected to the output enable of asynchronous memories connected to chip selects. During bus read cycles, the ColdFire processor will drive OE low. 3.2.4 Data Bus The data bus (D[31:16]) is bi-directional and non-multiplexed. Data is registered by the SCF5250 on the rising clock edge. The data bus uses a default configuration if none of the chip-selects or DRAM bank match the address decode. All 16 bits of the data bus are driven during writes, regardless of port width or operand size. 3.2.5 Transfer Acknowledge The TA/GPIO12 pin is the transfer acknowledge signal. 3.3 SDRAM Controller Signals The following SDRAM signals provide a glueless interface to external SDRAM. An SDRAM width of 16 bits is supported and can access as much as 32MB of memory. ADRAMs are not supported. Table 3. SDRAM Controller Signals SDRAM Signal Description Synchronous DRAM row address strobe The SDRAS/GPIO59 active low pin provides a seamless interface to the RAS input on synchronous DRAM Synchronous DRAM Column Address Strobe The SDCAS/GPIO39 active low pin provides a seamless interface to CAS input on synchronous DRAM. Synchronous DRAM Write The SDWE/GPIO38 active-low pin is asserted to signify that a SDRAM write cycle is underway. This pin outputs logic ‘1’ during read bus cycles. Synchronous DRAM Chip Enable The SD_CS0/GPIO60 active-low output signal is used during synchronous mode to route directly to the chip select of a SDRAM device. Synchronous DRAM UDQM and LQDM signals The DRAM byte enables UDMQ and LDQM are driven by the SDUDQM/GPO53 and SDLDQM/GPO52 byte enable outputs. Synchronous DRAM clock The DRAM clock is driven by the BCLK/GPIO40 signal Synchronous DRAM Clock Enable The BCLKE active high output signal is used during synchronous mode to route directly to the SCKE signal of external SDRAMs. This signal provides the clock enable to the SDRAM. |
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