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AN4501 데이터시트(PDF) 12 Page - STMicroelectronics |
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AN4501 데이터시트(HTML) 12 Page - STMicroelectronics |
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12 / 48 page ![]() Guideline for the selection of external components AN4501 12/48 DocID026394 Rev 1 The additional input voltage ripple caused by the ESR is: which is indeed negligible compared to 70 mV. The sum of both contributions is below the maximum target of 100 mV ( ΔVIN,MAX). Step 6: Selection of the switching MOSFET The minimum required breakdown voltage is the same as the breakdown voltage of the diode. A 60 V, 16 m Ω max @ 25°C is considered. Estimation of the switching losses The turn-on and turn-off times of the considered MOSFET with is estimated to 20 ns. The maximum switching losses are given by: Calculation of the max. RMS current The MOSFET’s maximum RMS current is estimated by: Iterative calculation of the total power losses and of the maximum junction temperature Considering at maximum ambient temperature of 85°C, a thermal coefficient of the RDSON of 0.006 K-1, 20 ns of rise and fall times and a thermal resistance of 25 K/W, an iterative calculation leads to a junction temperature of 125°C and a RDSON of 25.6 mΩ with a precision of 0.2 m Ω . Refer to Section 8.3.2 for the calculation details. This confirms that the MOSFET can operate in the worst case conditions, without exceeding the maximum rating of the junction temperature (175°C in general). ESR CI N I L,PP,MAX × 210 3 – 2.36 × ⋅ 4.8mV == P M1,SW V OUT I LM AX , × F SW × 2 ------------------------------------------------------------ t M1,SWON t M1,SWOFF + () × = P M1,SW 26 4.81 × 450 10 3 ⋅ × 2 ------------------------------------------------------- 20 10 9 – ⋅ 20 10 9 – ⋅ + () × 1.13W == I M1,RMS,MAX I OU T 1D MAX – ------------------------- D MAX 1 1 12 ------ I L,PP,VINMIN I L,MAX -------------------------------- 2 + × = I M1,RMS,MAX 1.0 1 0.791 – ------------------------ 0.791 1 1 12 ------ 1.55 4.81 ----------- 2 + × 4.30A == |
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