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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AN3994 데이터시트(PDF) 7 Page - STMicroelectronics |
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AN3994 데이터시트(HTML) 7 Page - STMicroelectronics |
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7 / 53 page  AN3994 ST multidrain technology evolution Doc ID 022380 Rev 1 7/53 Figure 4. ST’s HV technology evolution The MD II generation has already optimized the RDS(on) * area of about 40% compared to the first MD version, with an average value of about 30 m Ω*cm2. The excellent achievement of the MD II enabled STMicroelectronics to establish a new milestone in the power switch arena with the last MD V generation. Thanks to a proprietary ST technology, an extremely low value of p-column distance has been reached, therefore overcoming the physical limit imposed by the diffusion process. Additionally, the geometry of the p-columns was also optimized by a more effective diffusion process which enabled up to 40% reduction of RDS(on) * area if compared to the previous MD II generation. |
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