AN3994

List of figures

Doc ID 022380 Rev 1

3/53

List of figures

Figure 1.

Standard HV MOSFET device cross section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2.

MD device cross section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 3.

Silicon ideal limit, SJ limit and ST MD V position . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 4.

ST’s HV technology evolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 5.

N-channel Power MOSFET structure and intrinsic capacitances . . . . . . . . . . . . . . . . . . . . . 8

Figure 6.

Equivalent model of Power MOSFET intrinsic capacitances . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 7.

Clamped inductive load test circuit used to carry out the dynamic tests on the MOSFETs 10

Figure 8.

Turn-on of a MOSFET in a clamped inductive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 9.

Equivalent capacitive model of a MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 10.

Turn-off of a MOSFET in a clamped inductive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 11.

Vg(t) curve measured on STB42NM60N @16 A, 400 V, IG=1.5 mA . . . . . . . . . . . . . . . . . 17

Figure 12.

Vg(t) curve measured on STW48NM60N @16 A, 400 V, IG=1.5 mA . . . . . . . . . . . . . . . . 17

Figure 13.

Turn-on of STB42N65M5 @16 A, 400 V, 47 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 14.

Turn-on of STW48NM60N @16 A, 400 V, 47 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 15.

Turn-off of STB42N65M5 @16 A, 400 V, 47 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 16.

Turn-off of STW48NM60N @16 A, 400 V, 47 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 17.

Minimum RDS(on) per package achievable by MD II and MD V . . . . . . . . . . . . . . . . . . . . 20

Figure 18.

STB42N65M5 vs. STW48NM60N Eon @ 8 A/16 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 19.

STB42N65M5 vs. STW48NM60N di/dt at turn-on @ 8 A/16 A, 400 V . . . . . . . . . . . . . . . . 21

Figure 20.

STB42N65M5 vs. STW48NM60N dv/dt at turn-on @ 8 A/16 A 400 V . . . . . . . . . . . . . . . . 22

Figure 21.

STB42N65M5 vs. STW48NM60N zoom of dv/dt at turn-on @ 8 A/16 A 400 V . . . . . . . . . 22

Figure 22.

STB42N65M5 vs. STW48NM60N Eoff @ 8 A/16 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 23.

STB42N65M5 vs. STW48NM60N di/dt at turn-off @ 8 A/16 A, 400 V . . . . . . . . . . . . . . . . 23

Figure 24.

STB42N65M5 vs. STW48NM60N dv/dt at turn-off @ 8 A/ 16 A, 400 V . . . . . . . . . . . . . . . 24

Figure 25.

STP35N65M5 vs. STB36NM60N Eon @ 7.5 A/15 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 26.

STP35N65M5 vs. STB36NM60N di/dt at turn-on @ 7.5 A/15 A, 400 V . . . . . . . . . . . . . . . 25

Figure 27.

STP35N65M5 vs. STB36NM60N dv/dt at turn-on @ 7.5 A/15 A 400 V . . . . . . . . . . . . . . . 25

Figure 28.

STP35N65M5 vs. STB36NM60N Eoff @ 7.5 A/15 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . 26

Figure 29.

STP35N65M5 vs. STB36NM60N di/dt at turn-off @ 7.5 A/15 A, 400 V . . . . . . . . . . . . . . . 26

Figure 30.

STP35N65M5 vs. STB36NM60N dv/dt at turn-off @ 7.5 A/15 A, 400 V . . . . . . . . . . . . . . 27

Figure 31.

STP21N65M5 vs. STP24NM60N Eon @ 4 A/ 8 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 32.

STP21N65M5 vs. STP24NM60N di/dt at turn-on @ 4 A/8 A, 400 V . . . . . . . . . . . . . . . . . 28

Figure 33.

STP21N65M5 vs. STP24NM60N dv/dt at turn-on @ 4 A/8 A, 400 V . . . . . . . . . . . . . . . . . 28

Figure 34.

STP21N65M5 vs. STP24NM60N Eoff @ 4 A/8 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Figure 35.

STP21N65M5 vs. STP24NM60N di/dt at turn-off @ 4 A/8 A, 400 V . . . . . . . . . . . . . . . . . 29

Figure 36.

STP21N65M5 vs. STP24NM60N dv/dt at turn-off @ 4 A/8 A, 400 V . . . . . . . . . . . . . . . . . 30

Figure 37.

STP16N65M5 vs. STP18NM60N Eon @ 3 A/6 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 38.

STP16N65M5 vs. STP18NM60N di/dt at turn-on @ 3 A/ 6 A, 400 V . . . . . . . . . . . . . . . . . 31

Figure 39.

STP16N65M5 vs. STP18NM60N dv/dt at turn-on @ 3 A/6 A, 400 V . . . . . . . . . . . . . . . . . 31

Figure 40.

STP16N65M5 vs. STP18NM60N Eoff @ 3 A/6 A, 400 V . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 41.

STP16N65M5 vs. STP18NM60N di/dt at turn-off @ 3 A/6 A, 400 V . . . . . . . . . . . . . . . . . 32

Figure 42.

STP16N65M5 vs. STP18NM60N dv/dt at turn-off @ 3 A/6 A, 400 V . . . . . . . . . . . . . . . . . 33

Figure 43.

Equivalent capacitive model of a MOSFET with parasitic inductances at turn-on . . . . . . . 36

Figure 44.

Turn-on of STW77N65M5@400 V, 13 A, 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 45.

Equivalent driving circuit of a MOSFET at turn-on with parasitic source inductance . . . . . 38

Figure 46.

Simplified equivalent series resonant model of the driving circuit of a MOSFET . . . . . . . . 39

Figure 47.

Gate driving and main switching loops for a MOSFET in a BOOST-like topology . . . . . . . 40

Figure 48.

STW77 energy ON difference between the standard layout and the optimized layout . . . 41

Figure 49.

STW77 energy OFF difference between the standard layout and the optimized layout. . . 41