 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
AN3994 데이터시트(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN3994 데이터시트(HTML) 5 Page - STMicroelectronics |
|
|
5 / 53 page  AN3994 ST multidrain technology evolution Doc ID 022380 Rev 1 5/53 1 ST multidrain technology evolution At the beginning of 2000, STMicroelectronics introduced the super junction MOSFET technology to the market, the basic structure of which is clear from Figure 1: Figure 1. Standard HV MOSFET device cross section Figure 2. MD device cross section As concerns standard MOSFET technology, designers understand that RDS(on) * area and breakdown voltage are associated with a theoretical limit which strictly depends on the material and can not be overcome. Development efforts of the major suppliers have mainly focused on making the RDS(on)* area as close as possible to this physical limit, by reducing the most important contributions of a high voltage Power MOSFET to the total RDS(on). |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
