| 전자부품 데이터시트 검색엔진 |
|
AN4192 데이터시트(PDF) 19 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN4192 데이터시트(HTML) 19 Page - STMicroelectronics |
|
19 / 47 page ![]() AN4192 High-side MOSFET selection Doc ID 023820 Rev 1 19/47 Figure 20. Efficiency comparison @ Vout = 1.26 V The “asymmetric gate driving” approach can be used to reduce voltage stresses on the phase node without detrimental effects on the converter efficiency. The drawbacks are the number of devices (one resistor + one Schottky diode) and the cost increase. AM16464V1 |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |