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STUD802S 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STUD802S
상세설명  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD802S 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
80
V
1
IGSS
±100
nA
VGS(th)
1
V
25
gFS
38
S
VSD
CISS
3270
pF
COSS
210
pF
CRSS
145
pF
Qg
66
nC
166
nC
Qgs
222
nC
Qgd
55
tD(ON)
50
ns
tr
6
ns
tD(OFF)
16
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=40V
ID=16A
VGS=10V
RGEN=60 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=64V,ID=16A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=16A
VDS=10V , ID=16A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=64V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=14A
35
32
50
m ohm
b
f=1.0MHz
b
VDS=64V,ID=16A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=16A
0.9
1.3
V
Notes
a.Pulse Test:Pulse Width < 300us, Duty Ctcle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13)
_
_
STU/D802S
www.samhop.com.tw
Mar,31,2010
2
IS
Maximum Continuous Drain-Source Diode Forward Current
16
A
Ver 1.0



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