PIC16C54T-HSSLASHSS datasheet(60/217 Pages) MICROCHIP

60 / 217 page

PIC16C5X

PIC16C52

DS30453B-page 60

Preliminary

10.1

DC Characteristics: PIC16C52-04 (Commercial)

PIC16C52-04I (Industrial)

DC Characteristics

Power Supply Pins

Standard Operating Conditions (unless otherwise speciﬁed)

Operating Temperature

°C ≤ TA ≤ +70°C (commercial)

–40

°C ≤ TA ≤ +85°C (industrial)

Characteristic

Sym

Min

Typ(1)

Max

Units

Conditions

Supply Voltage

VDD

3.0

—

6.25

FOSC = DC to 4 MHz

RAM Data Retention Voltage(2)

VDR

—

1.5*

—

Device in SLEEP Mode

Supply Current(3,4)

IDD

—

1.8

3.3

FOSC = 4 MHz, VDD = 5.5 V

Power Down Current(5)

Commercial

Industrial

IPD

—

0.6

µA

VDD = 3.0 V

* These parameters are characterized but not tested.

Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25

°C.This data is for design guidance

only and is not tested.

2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus

loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on

the current consumption.

a) The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to

Vss, T0CKI = VDD, MCLR = VDD.

b) For standby current measurements, the conditions are the same, except that

the device is in SLEEP mode.

4: For RC option, does not include current through Rext. The current through the resistor can be estimated by

the formula: IR = VDD/2Rext (mA) with Rext in k

Ω.

5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is

measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.

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