전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

POWERSTEP01 데이터시트(PDF) 34 Page - STMicroelectronics

부품명 POWERSTEP01
상세설명  System-in-package integrating microstepping controller and 10 A power MOSFETs
PDF  92 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

POWERSTEP01 데이터시트(HTML) 34 Page - STMicroelectronics

Back Button POWERSTEP01 Datasheet HTML 30Page - STMicroelectronics POWERSTEP01 Datasheet HTML 31Page - STMicroelectronics POWERSTEP01 Datasheet HTML 32Page - STMicroelectronics POWERSTEP01 Datasheet HTML 33Page - STMicroelectronics POWERSTEP01 Datasheet HTML 34Page - STMicroelectronics POWERSTEP01 Datasheet HTML 35Page - STMicroelectronics POWERSTEP01 Datasheet HTML 36Page - STMicroelectronics POWERSTEP01 Datasheet HTML 37Page - STMicroelectronics POWERSTEP01 Datasheet HTML 38Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 34 / 92 page
background image
Functional description
powerSTEP01
34/92
DocID025022 Rev 5
The switch input can be used by GoUntil and ReleaseSW commands as described in
Section 11.2.10 on page 78 and Section 11.2.11 on page 79.
If the SW input is not used, it should be connected to VDD.
Figure 14. External switch connection
7.15
Integrated power MOSFETs
The typical characteristics of the 8 N-channel MOSFETs integrated into the system-in-
package are listed in Table 10.
7.16
Programmable slew rate
The powerSTEP01 integrates eight programmable gate drivers which allow the output slew
rate to be fixed in a wide range of values.
The following parameters can be adjusted:
–
Gate sink/source current (IGATE)
–
controlled current time (tCC)
–
Turn-off over-boost time (tOB).
During the turn-on, the gate driver charges the gate forcing an IGATE current for all the
controlled current time period. At the end of the controlled current phase the gate of the
integrated MOSFET should be completely charged.
During the turn-off the gate driver discharges the gate sinking an IGATE current for all the
controlled current time period. At the beginning of the turn-off an overboost phase can be
added: in this case the gate driver sinks an IOB current for the programmed tOB period in
order to rapidly reach the plateau region. At the end of the controlled current time the gate of
the integrated MOSFET should be completely discharged.
AM12833v1
External
switch
SW
V
DD
Table 10. Integrated MOSFETs characteristics at Tj = 25 °C
Symbol
Parameter
Typical value
Unit
VGS(th)
Gate threshold voltage
3
V
Qg
Total gate charge at Vgs = 10 V
25
nC
VSD
Source-drain diode forward on voltage at ISD = 10 A
0.8
V



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com