| 전자부품 데이터시트 검색엔진 |
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AT89C51ED2-RDTIM 데이터시트(PDF) 8 Page - ATMEL Corporation |
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AT89C51ED2-RDTIM 데이터시트(HTML) 8 Page - ATMEL Corporation |
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8 / 24 page ![]() AT89C51RD2 / AT89C51ED2 QualPack 8 Rev. 0 – 2003 July 4.2 Qualification Test Methods General Requirements for Plastic packaged CMOS ICs: Standard Test Description Acceptance MIL-STD 883 Method 1005 Electrical Life Test (Early Failure Rate) 48 hours 140°C 0/300 - 48h MIL-STD 883 Method 1005 Electrical Life Test (Latent Failure Rate) 1000 hours 140°C Dynamic or Static 0/100 - 500h MIL-STD 883 Method 3015.7 Electrostatic Discharge HBM +/-2000v 1.5kOhm/100pF/3 pulses 0/3 per level JEDEC 78 Latch up 50mW power injection, 50% overvoltage @125°C 0/5 per stress AEC Q100 Method 005 NVM Endurance Program Erase Cycles 25°C 0/50 - 10kc AEC Q100 Method 005 NVM Data Retention High Temperature Storage 165°C 0/50 - 500h MIL-STD 883 Method 1010 Temperature Cycling 1000 cycles –65°C/150°C air/air 0/50 - 500c Atmel PAQA0184 HAST after Preconditioning 144 hours 130°C/85%RH 0/50 – 96h EIA JESD22-A101 85/85 Humidity Test 1000 hours 85°C/85%RH 0/50 - 500h EIA JESD22-A110 HAST 336 hours 130°C/85%RH 0/50 - 168h EIA JEDEC 20-STD Preconditioning Soldering Stress 220°C/235°c/3 times 0/11 per class MIL-STD 883 Method 2003 Solderability 0/3 MIL-STD 883 Method 2015 Marking Permanency 0/5 |
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