AT89C51RD2 / AT89C51ED2 QualPack

Rev. 0 – 2003 July

13

The best fit coefficients in the regression analysis are:

T0= 14.25034317 LN-sec

Ea= 1.060043152 eV

GAMMA= -3.2454227 LN-sec-cm/MV

SIGMA= 0.414655753 LN-sec

with an adjusted r-squared of 97.99%. The intrinsic lifetime at use conditions calculated from this regression is

56174 years.

Conclusion:

Using the coefficients determined above, the time to reach any cumulative percent failure level can be estimated

given the stress conditions. Using 105C and 3.3 volts on 63 Angstrom N-Channel gate2 oxide, we may expect

0.01% of capacitors having 6,267 square microns area with 6,174 microns of active edge to fail in about 613 years,

exceeding the technology requirement of ten years.

Test results :

AT56.8K Active Edge TDDB 225C

-2,00000E+00

-1,00000E+00

0,00000E+00

1,00000E+00

2,00000E+00

1,00

E+00

1,00

E+01

1,00

E+02

1,00

E+03

1,00

E+04

1,00

E+05

Tbd (sec)

AT56.8K Active Edge TDDB 200C

-2,00000E+00

-1,00000E+00

0,00000E+00

1,00000E+00

2,00000E+00

1,00

E+00

1,00

E+01

1,00

E+02

1,00

E+03

1,00

E+04

1,00

E+05

Tbd (sec)

AT56.8K Active Edge TDDB 175C

-2,00000E+00

-1,00000E+00

0,00000E+00

1,00000E+00

2,00000E+00

1,00

E+00

1,00

E+01

1,00

E+02

1,00

E+03

1,00

E+04

1,00

E+05

Tbd (sec)