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LE25S161 데이터시트(PDF) 16 Page - ON Semiconductor

부품명 LE25S161
상세설명  Serial Flash Memory
PDF  54 Pages
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10. Description of Commands and Operations
A detailed description of the functions and operations corresponding to each command is presented below.
10-1. Read Status Register (RDSR)
The contents of the status registers can be read using the Read Status Register (RDSR). This command can be executed
even during the following operations.
• Erase (SSE, SE or CHE)
• Page Program (PP or PPL)
• Write Status Register (WRSR)
"Figure 2. Read Status Register (RDSR)" shows the timing waveforms.
The sequence of RDSR operation :
CS goes to low  input RDSR command (05h)
 Status Register data (SRWP, SUS, TB, BP2, BP1, BP0,WEN, RDY) out on SO 
completed by CS=high
* The data output starts from the falling edge of SCK(7th clock)
This command outputs the contents of the status registers synchronized to the falling edge of the clock (SCK).
If the clock input is continued after bit0 (RDY) has been output, the data is output by returning to bit7 (SRWP) that was
first output, after which the output is repeated for as long as the clock input is continued. The data can be read by this
command at any time (even during a program, erase cycle). By setting CS to high, the device is deselected, and Read
JEDEC ID cycle is completed. While the device is deselected, the output pin SO is in a high-impedance state
● DATA: Status Resister, "Table 3 Status Register"
Figure 2. Read Status Register (RDSR)
CS
SCK
SI
SO
MSB
MSB
MSB
05h
DATA
DATA
High Impedance
8
3
2
1
0
7
6
5
4
15
23
Mode 3
Mode 0
8CLK
16
DATA
MSB



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