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LE25S161 데이터시트(PDF) 34 Page - ON Semiconductor

부품명 LE25S161
상세설명  Serial Flash Memory
PDF  54 Pages
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LE25S161 데이터시트(HTML) 34 Page - ON Semiconductor

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34
Read Device ID (RDDI)
Also the exit from deep power-down is completed by one byte cycle or more of the Read Device ID (RID: ABh).
"Table 7. Device ID code" lists the device ID codes.
"Figure 21. Read Device ID " shows the timing waveforms.
The sequence of EDP & RID operation :
CS goes to low  input RID command (ABh)  3 byte dummy cycle
 Device ID out on SO 
 completed by CS=high
* The Device ID is output repeatedly as long as clock inputs are present
* The data output starts from the falling edge of SCK(31th clock)
By setting CS to high, the device is deselected, and Read ID cycle is completed. While the device is deselected, the output
pin SO is in a high-impedance state.
CS
High Impedance
Dev ID
SCK
SO
SI
ABh
X
MSB
0
1
2
3
4
5
6
7
8
31
8CL
Mode0
Mode3
32
X
tRDP
Standby
current (Isb)
Deep Power-down Standbycurrent (Idsb)
Dev ID
24 Dummy
Bits
39
Dev ID
Figure 21. Read Device ID



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