| 전자부품 데이터시트 검색엔진 |
|
LE25S161 데이터시트(PDF) 32 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
LE25S161 데이터시트(HTML) 32 Page - ON Semiconductor |
|
32 / 54 page ![]() LE25S161 www.onsemi.com 32 10-14. Deep Power-down (DP) The standby current can be further reduced with this command (DP). "Figure 19. Deep Power-down (DP)" shows the timing waveforms. The sequence of DP operation : CS goes to low input DP command (B9h) CS goes to high (be executed by the rising CS edge) The deep power-down command issued during an internal write operation will be ignored. The deep power-down state is exited using the deep power-down exit (EDP). All other commands are ignored. Figure 19. Deep Power-down (DP) SI SCK High Impedance SO CS tDP B9h 0 1 2 3 4 5 6 7 Mode3 Mode0 8CLK MSB Standby current (Isb) Deep Power-down Standby Current (Idsb) |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |