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LE25S161 데이터시트(PDF) 24 Page - ON Semiconductor |
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LE25S161 데이터시트(HTML) 24 Page - ON Semiconductor |
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24 / 54 page ![]() LE25S161 www.onsemi.com 24 10-7. Small Sector Erase (SSE) Small Sector Erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of 4Kbytes. "Figure 10. Small Sector Erase (SSE)" shows the timing waveforms. "Figure 32. Small Sector Erase Flowcharts" shows the flowcharts. The sequence of SSE operation : CS goes to low input SSE command (20h or D7h) 3 Byte address (A23-A0) input on SI CS goes to high (be executed by the rising CS edge) * A20 to A12 are valid address After the correct input sequence the internal erase operation is executed by the rising CS edge, and it is completed automatically by the control exercised by the internal timer (tSSE). The end of erase operation can also be detected by status register (RDY). Add (A7-A0) Add (A15-A8) Add (A23-A16) Self-timed Erase Cycle SCK SI High Impedance SO CS tSSE 20h / D7h 15 0 1 2 3 4 5 6 7 8 23 16 24 31 Mode3 Mode0 8CLK MSB Figure 10. Small Sector Erase (SSE) ● Address A23 to A21, A11 to A0 are "Don't care". |
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