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STM32F058C8 데이터시트(PDF) 43 Page - STMicroelectronics |
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STM32F058C8 데이터시트(HTML) 43 Page - STMicroelectronics |
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43 / 104 page ![]() DocID023402 Rev 3 43/104 STM32F058C8 STM32F058R8 STM32F058T8 Electrical characteristics 84 6.3 Operating conditions 6.3.1 General operating conditions 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 20 are derived from tests performed under the ambient temperature condition summarized in Table 19. Table 19. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 48 MHz fPCLK Internal APB clock frequency - 0 48 VDD Standard operating voltage - 1.65 1.95 V VDDA Analog operating voltage (ADC and DAC not used) Must have a potential equal to or higher than VDD VDD 3.6 V Analog operating voltage (ADC and DAC used) 2.4 3.6 VBAT Backup operating voltage - 1.65 3.6 V VIN I/O input voltage TC and RST I/O –0.3 VDDIOx+0.3 V TTa and POR I/O –0.3 VDDA+0.3(1) FT and FTf I/O –0.3 5.2(1) BOOT0 0 5.2 PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(2) LQFP64 - 444 mW UFBGA64 - 308 UFQFPN48 - 625 WLCSP36 - 333 TA Ambient temperature for the suffix 6 version Maximum power dissipation –40 85 °C Low power dissipation(3) –40 105 Ambient temperature for the suffix 7 version Maximum power dissipation –40 105 °C Low power dissipation(3) –40 125 TJ Junction temperature range Suffix 6 version –40 105 °C Suffix 7 version –40 125 1. For operation with a voltage higher than VDDIOx + 0.3 V, the internal pull-up resistor must be disabled. 2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. See Section 7.5: Thermal characteristics. 3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.5: Thermal characteristics). |
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