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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32F303XD 데이터시트(PDF) 114 Page - STMicroelectronics |
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STM32F303XD 데이터시트(HTML) 114 Page - STMicroelectronics |
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114 / 173 page  Electrical characteristics STM32F303xD STM32F303xE 114/173 DocID026415 Rev 5 Figure 35. NAND controller write timings Table 59. Switching characteristics for NAND Flash read cycles(1) (2) 1. Based on characterization, not tested in production. 2. CL = 30 pF Symbol Parameter Min Max Unit tw(NOE) FMC_NOE low width 6THCLK 6THCLK + 2 ns tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high THCLK+5 - th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0- td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 6THCLK -0.5 th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 6THCLK-1 - Table 60. Switching characteristics for NAND Flash write cycles(1) 1. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NWE) FMC_NWE low width 4THCLK-0.5 4THCLK + 1.5 ns tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid - 3.5 th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK -1.5 - td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5THCLK – 3 - td(ALE_NWE) FMC_ALE valid before FMC_NWE low - 4THCLK+2 th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 2THCLK-1 - |
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