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STM32F303XD 데이터시트(PDF) 116 Page - STMicroelectronics

부품명 STM32F303XD
상세설명  ARM Cortex-M4 32b MCUFPU, up to 512KB Flash, 80KB SRAM, FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V
PDF  173 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F303XD 데이터시트(HTML) 116 Page - STMicroelectronics

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Electrical characteristics
STM32F303xD STM32F303xE
116/173
DocID026415 Rev 5
Pre qualification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
6.3.13
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 62. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/72 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP144 package
compliant with IEC
61967-2
0.1 to 30 MHz
7
dBµV
30 to 130 MHz
15
130 MHz to 1GHz
31
SAE EMI Level
4
-
Table 63. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1. Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C, conforming
to ANSI/JEDEC JS-001
22000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C, conforming
to ANSI/ESD STM5.3.1
C3
250



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