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STM32F446VC 데이터시트(PDF) 80 Page - STMicroelectronics

부품명 STM32F446VC
상세설명  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 512kB Flash/1284KB RAM, USB OTG HS/FS, 17 TIMs, 3 ADCs, 20 comm. interfaces
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32F446VC 데이터시트(HTML) 80 Page - STMicroelectronics

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Electrical characteristics
STM32F446xC/E
80/202
DocID027107 Rev 6
6.3.5
Reset and power control block characteristics
The parameters given in Table 21 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.
Table 21. reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD
Programmable voltage
detector level selection
PLS[2:0]=000 (rising edge)
2.09
2.14
2.19
V
PLS[2:0]=000 (falling edge)
1.98
2.04
2.08
V
PLS[2:0]=001 (rising edge)
2.23
2.30
2.37
V
PLS[2:0]=001 (falling edge)
2.13
2.19
2.25
V
PLS[2:0]=010 (rising edge)
2.39
2.45
2.51
V
PLS[2:0]=010 (falling edge)
2.29
2.35
2.39
V
PLS[2:0]=011 (rising edge)
2.54
2.60
2.65
V
PLS[2:0]=011 (falling edge)
2.44
2.51
2.56
V
PLS[2:0]=100 (rising edge)
2.70
2.76
2.82
V
PLS[2:0]=100 (falling edge)
2.59
2.66
2.71
V
PLS[2:0]=101 (rising edge)
2.86
2.93
2.99
V
PLS[2:0]=101 (falling edge)
2.65
2.84
3.02
V
PLS[2:0]=110 (rising edge)
2.96
3.03
3.10
V
PLS[2:0]=110 (falling edge)
2.85
2.93
2.99
V
PLS[2:0]=111 (rising edge)
3.07
3.14
3.21
V
PLS[2:0]=111 (falling edge)
2.95
3.03
3.09
V
VPVDhyst(1) PVD hysteresis
-
-
100
-
mV
VPOR/PDR
Power-on/power-down
reset threshold
Falling edge
1.60
1.68
1.76
V
Rising edge
1.64
1.72
1.80
V
VPDRhyst(1) PDR hysteresis
-
-
40
-
mV
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
V
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
V
Rising edge
2.53
2.59
2.63
V
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
V
Rising edge
2.85
2.92
2.97
V
VBORhyst(1) BOR hysteresis
-
-
100
-
mV
TRSTTEMPO
(1)(2)
POR reset temporization -
0.5
1.5
3.0
ms



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