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STM32F446VC 데이터시트(PDF) 102 Page - STMicroelectronics |
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STM32F446VC 데이터시트(HTML) 102 Page - STMicroelectronics |
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102 / 202 page ![]() Electrical characteristics STM32F446xC/E 102/202 DocID027107 Rev 6 6.3.9 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The external clock signal has to respect the Table 56: I/O static characteristics. However, the recommended clock input waveform is shown in Figure 23. The characteristics given in Table 37 result from tests performed using an high-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 16. Table 36. Low-power mode wakeup timings Symbol Parameter Conditions Typ(1) Max(1) Unit tWUSLEEP(2) Wakeup from Sleep - 6 6 CPU clock cycle TWUSLEEPFDSM(1) Wakeup from Sleep with Flash memory in Deep power down mode - 33.5 50 µs tWUSTOP(2) Wakeup from Stop mode with MR/LP regulator in normal mode Main regulator is ON 12.8 15 Main regulator is ON and Flash memory in Deep power down mode 104.9 115 Low power regulator is ON 20.6 28 Low power regulator is ON and Flash memory in Deep power down mode 112.8 120 tWUSTOP(2) Wakeup from Stop mode with MR/LP regulator in Under-drive mode Main regulator in under-drive mode (Flash memory in Deep power- down mode) 110 140 Low power regulator in under-drive mode (Flash memory in Deep power- down mode) 114.4 128 tWUSTDBY(2)(3) Wakeup from Standby mode - 325 400 1. Guaranteed based on test during characterization. 2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction. 3. tWUSTDBY maximum value is given at –40 °C. |
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