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STM32F446VC 데이터시트(PDF) 118 Page - STMicroelectronics |
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STM32F446VC 데이터시트(HTML) 118 Page - STMicroelectronics |
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118 / 202 page ![]() Electrical characteristics STM32F446xC/E 118/202 DocID027107 Rev 6 6.3.17 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are derived from tests performed under the conditions summarized in Table 16. All I/Os are CMOS and TTL compliant. Table 56. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL FT, FTf, TTa and NRST I/O input low level voltage 1.7 V≤VDD≤3.6 V - - 0.35VDD–0.04(1) V 0.3VDD(2) BOOT0 I/O input low level voltage 1.75 V ≤ VDD ≤ 3.6 V, – 40 °C≤ TA ≤ 105 °C -- 0.1VDD+0.1(1) 1.7 V ≤ VDD ≤ 3.6 V, 0 °C ≤ TA ≤105 °C -- VIH FT, FTf, TTa and NRST I/O input high level voltage(4) 1.7 V≤VDD≤3.6 V 0.45VDD+0.3(1) -- V 0.7VDD(2) BOOT0 I/O input high level voltage 1.75 V≤VDD ≤3.6 V, – 40 °C≤TA ≤105 °C 0.17VDD+0.7(1) -- 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤105 °C VHYS FT, FTf, TTa and NRST I/O input hysteresis 1.7 V≤VDD≤3.6 V - 10%VDD - V BOOT0 I/O input hysteresis 1.75 V≤VDD ≤3.6 V, –40 °C≤TA ≤105 °C - 100m - 1.7 V≤VDD ≤3.6 V, 0 °C≤TA ≤105 °C -- Ilkg I/O input leakage current (3) VSS ≤VIN ≤VDD -- ±1 µA I/O FT input leakage current (4) VIN = 5 V - - 3 |
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