UCS1001-3 datasheet(55/57 Pages) MICROCHIP

55 / 57 page

USB Port Power Controller with Charger Emulation

Datasheet

SMSC UCS1001

Revision 1.4 (07-16-13)

DATASHEET

Chapter 11 Document Revision History

Table 11.1 Customer Revision History

REVISION

LEVEL & DATE

SECTION/FIGURE/ENTRY

CORRECTION

Revision 1.4

(07-16-13)

Cover



Added patent information to cover

Table 3.3, "Electrical

Specifications"



Added specifications for IDET_QUAL / IREM_QUAL and IBUS_CHG

Section 9.8.2, "Emulation

Cycling"



Updated text for DCE cycle behavior. Changed cycle order for

1001-3 and 1001-4.

Revision 1.3

(02-14-13)

Table 3.3, "Electrical

Specifications"



Added Pin Wake Time (tPIN_WAKE).



Changed ISLEEP from 8 µA (MAX) to 15 µA (MAX) per

characterization data.



Added 12W Current Limit changes.

Figure 4.5, "Wake Timing"



Changed ~3ms to tPIN_WAKE. Removed third example: “Wake

with S0 & PWR_EN to Auto-transition Detect State (VS >

VS_UVLO, M1 & M2 & EM_EN not all ‘0’ and not set to Data

Pass-through)”.

Chapter 4, General

Description



After system diagrams, noted that is available.

Chapter 11, Document

Revision History



Added.

Revision 1.2

(05-21-12)

Cover



Certification added: “

UL recognized and EN/IEC 60950-1

(CB) certified”

Revision 1.2

(05-16-12)

Cover



Source voltage: Vs MIN moved from 2.7 to 2.9 V to

accommodate UL

Table 3.3, "Electrical

Specifications"



Source voltage: Vs MIN moved from 2.7 to 2.9 V to

accommodate UL

Cover



There are nine preloaded charger emulation profiles.

Chapter 2, Pin Description



Changed “unused connection” to n/a for ILIM, SEL, LATCH,

and S0 pins as they must be used.



Added Note 2.1: Total leakage current from pins 3 and 4

(VBUS) to ground must be less than 100 µA for proper attach

/ removal detection operation.

Table 3.3, "Electrical

Specifications"



Updated selectable current limits (ILIMx) min and max values.

Typical values did not change.



Changed IACTIVE from 500 µA (TYP) to 650 µA (TYP).



Changed IACTIVE from TBD µA (MAX) to 750 µA (MAX).



Changed ISLEEP from TBD µA (MAX) to 8 µA (MAX).



Table 4.1, "Power States

Control Settings"



“Behavior” cell in the "Sleep" row: Clarified behavior by

adding "VBUS will be near ground potential”.

Section 4.1.2, "Sleep State

Operation"



Clarified behavior by adding "VBUS will be near ground

potential”.

UCS1001-3 데이터시트(PDF) 55 Page - Microchip Technology

UCS1001-3 데이터시트(HTML) 55 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57

데이터시트 다운로드

링크 URL