UCS1001-3 datasheet(56/57 Pages) MICROCHIP

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USB Port Power Controller with Charger Emulation

Datasheet

Revision 1.4 (07-16-13)

SMSC UCS1001

DATASHEET

Section 4.2.3, "Back-voltage

Detection" and Section

4.2.4, "Back-drive Current

Protection"



Section “Back-voltage / Back-drive Detection” split into two.



In Section 4.2.4, "Back-drive Current Protection", corrected

reference IBD_LK to match elec spec symbol IBD_1 and

rewrote back-drive description.

Section 6.2.4, "Current

Limiting Modes"



Added: The current limiting mode used depends on the Active

state mode (see Section 9.9, "Current Limit Mode

Associations").

Section 6.2.4.1, "Trip Mode"



Added application note: To avoid cycling in trip mode, set ILIM

higher than the highest expected portable device current

draw.

Table 9.2, "Current Limit

Mode Options"



Rearranged rows so DCE Cycle is grouped together.



Added row for DCE Cycle when a charger emulation profile is

being applied.

Section 9.8.2, "Emulation

Cycling"

and

Section 9.11.5, "Legacy 7

Charger Emulation Profile"



Legacy 7 charger emulation profile .

Chapter 10, Typical

Operating Curves



Rearranged order of TOCs.



Added new TOCs:

— Figure 10.3, "Short Applied After Power Up"

— Figure 10.5, "Internal Power Switch Short Response"

— Figure 10.16, "Trip Current Limit Operation vs. Temp."

— Figure 10.17, "IBUS Measurement Accuracy"

— Figure 10.18, "Active State Current vs. Temp"

— Figure 10.19, "Detect State Current vs. Temp"

— Figure 10.20, "Sleep State Current vs. Temp"



Updated the following:

— Figure 10.6, "VBUS Discharge Behavior"

— Figure 10.11, "RDCP_RES Resistance vs.Temp"

— Figure 10.13, "VS Over-Voltage Threshold vs. Temp"

— Figure 10.14, "VS Under Voltage Threshold vs. Temp"

— Figure 10.15, "Detect State VBUS vs. IBUS"

Revision 1.1

(11-21-11)

Table 3.2, "Power

Dissipation Summary"



Missing units added.

Table 3.3, "Electrical

Specifications"



Changed tDET_CHARGE from 400 ms to 800 ms typ and

changed condition from CBUS = 220 µF to CBUS = 500 µF

max.



VS Leakage Current changed from 0.8 µA typical to 2.2 µA.



Changed IBD_1 and IBD_2 from TBD typ to 0 µA typ and from

1.5 µA max to 2 µA max



Changed ITST to ITEST and changed typ from 165 to 190 mA.



Changed tON_PSW from 3 ms to 0.75 ms typical and

tOFF_PSW_INA from 1 ms to 0.75 ms typical.



Table 3.4, "ESD

Ratings"Section 3.1



Charged Device Model: changed from 200 V to 500 V

Note 4.1



Added note: In order to transition from Active state Data Pass-

through mode into Sleep with these settings, change the M1,

M2, and EM_EN pins before changing the PWR_EN pin.

Table 11.1 Customer Revision History (continued)

REVISION

LEVEL & DATE

SECTION/FIGURE/ENTRY

CORRECTION

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