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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MB91F467DA 데이터시트(PDF) 96 Page - Cypress Semiconductor |
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MB91F467DA 데이터시트(HTML) 96 Page - Cypress Semiconductor |
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96 / 137 page  Document Number: 002-04613 Rev. *A Page 96 of 137 MB91460D Series 15.6 FLASH memory program/erase characteristics 15.6.1 MB91F465DA (TA = 25oC, Vcc = 5.0V) *1:This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature measurements into normalized value at 85oC) 15.6.2 MB91F467Dx (TA = 25oC, Vcc = 5.0V) *1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature measurements into normalized value at 85oC) Parameter Value Unit Remarks Min Typ Max Sector erase time - 0.9 3.6 s Erasure programming time not included Chip erase time - n*0.9 n*3.6 s n is the number of Flash sector of the device Word (16-bit width) programming time - 23 370 μs System overhead time not included Programme/Erase cycle 10 000 cycle Flash data retention time 20 year *1 Parameter Value Unit Remarks Min Typ Max Sector erase time - 0.5 2.0 s Erasure programming time not included Chip erase time - n*0.5 n*2.0 s n is the number of Flash sector of the device Word (16 or 32-bit width) program- ming time - 6 100 μs System overhead time not included Programme/Erase cycle 10 000 cycle Flash data retention time 20 year *1 |
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