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TLV70235DBVT 데이터시트(PDF) 13 Page - Texas Instruments |
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TLV70235DBVT 데이터시트(HTML) 13 Page - Texas Instruments |
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13 / 33 page ![]() TLV702xx GND EN IN OUT V IN V OUT On Off C IN C OUT 1 F Ceramic m TLV702 www.ti.com SLVSAG6C – SEPTEMBER 2010 – REVISED MARCH 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The TLV702 belongs to a new family of next-generation value LDO regulators. These devices consume low quiescent current and deliver excellent line and load transient performance. These characteristics, combined with low noise and very good PSRR with little (VIN – VOUT) headroom, make this family of devices ideal for portable RF applications. This family of regulators offers current limit and thermal protection, and is specified from –40°C to +125°C. 8.2 Typical Application Figure 25. Typical Application Circuit 8.2.1 Design Requirements Table 2 lists the design parameters. Table 2. Design Parameters PARAMETER DESIGN REQUIREMENT Input voltage 2.5 V to 3.3 V Output voltage 1.8 V Output current 100 mA 8.2.2 Detailed Design Procedure 8.2.2.1 Input and Output Capacitor Requirements 1- μF X5R- and X7R-type ceramic capacitors are recommended because these capacitors have minimal variation in value and equivalent series resistance (ESR) overtemperature. However, the TLV702 is designed to be stable with an effective capacitance of 0.1 μF or larger at the output. Thus, the device is stable with capacitors of other dielectric types as well, as long as the effective capacitance under operating bias voltage and temperature is greater than 0.1 μF. This effective capacitance refers to the capacitance that the LDO sees under operating bias voltage and temperature conditions; that is, the capacitance after taking both bias voltage and temperature derating into consideration. In addition to allowing the use of lower-cost dielectrics, this capability of being stable with 0.1- μF effective capacitance also enables the use of smaller footprint capacitors that have higher derating in size- and space-constrained applications. Using a 0.1- μF rated capacitor at the output of the LDO does not ensure stability because the effective capacitance under the specified operating conditions must not be less than 0.1 μF. Maximum ESR should be less than 200 m Ω. Copyright © 2010–2015, Texas Instruments Incorporated Submit Documentation Feedback 13 Product Folder Links: TLV702 |
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