STM8TL52X4 datasheet(54/84 Pages) STMICROELECTRONICS

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Electrical parameters

STM8TL52x4 STM8TL53x4

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DocID022344 Rev 7

Figure 16. Typical LSI frequency vs. VDD

9.3.7

Memory characteristics

TA = 40 to 85°C unless otherwise specified.

RAM characteristics

Flash memory characteristics

Table 27. RAM and hardware registers

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VRM

Data retention mode (1)

1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization, not tested in production.

Halt mode (or Reset)

1.4

Table 28. Flash program memory

Symbol

Parameter

Conditions

Min.

Typ.

Max.(1)

Unit

VDD

Operating voltage



(all modes, read/write/erase)

fMASTER = 16 MHz

1.65

3.6

tprog

Programming time for 1 or 64 byte (block)

erase/write cycles (on programmed byte)

-6-

Programming time for 1 to 64 byte (block)

write cycles (on erased byte)

-3-

Iprog

Programming/ erasing consumption

TA+25 °C, VDD = 3.0 V

0.7

TA+25 °C, VDD = 1.8 V

1. Data based on characterization results, not tested in production.

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