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STM8TL52X4 데이터시트(PDF) 56 Page - STMicroelectronics |
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STM8TL52X4 데이터시트(HTML) 56 Page - STMicroelectronics |
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56 / 84 page ![]() Electrical parameters STM8TL52x4 STM8TL53x4 56/84 DocID022344 Rev 7 9.3.8 I/O port pin characteristics General characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. All unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor. Figure 17. Typical pull-up resistance RPU vs. VDD with VIN=VSS Table 31. I/O static characteristics (1) Symbol Parameter Conditions Min. Typ. Max. Unit VIL Input low level voltage(2) Standard I/Os VSS0.3 - 0.3 x VDD V VIH Input high level voltage(2) Standard I/Os 0.70 x VDD -VDD+0.3 Vhys Schmitt trigger voltage hysteresis(3) Standard I/Os - 200 - mV Ilkg Input leakage current(4) VSS VIN VDD -- 50 nA VSS VIN Vreg Rx, Tx I/Os -- 50 RPU Weak pull-up equivalent resistor(5) VIN VSS 30 45 60 k CIO(6) I/O pin capacitance - - 5 - pF 1. VDD = 3.0 V, TA = 40 to 85 °C unless otherwise specified. 2. Data based on characterization results, not tested in production. 3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 4. The maximum value may be exceeded if negative current is injected on adjacent pins. 5. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics. 6. Data guaranteed by Design, not tested in production. |
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