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STM32F101XF 데이터시트(PDF) 54 Page - STMicroelectronics |
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STM32F101XF 데이터시트(HTML) 54 Page - STMicroelectronics |
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54 / 117 page ![]() Electrical characteristics STM32F101xF, STM32F101xG 54/117 DocID16553 Rev 5 Note: For CL1 and CL2, it is recommended to use high-quality ceramic capacitors in the 5 pF to 15 pF range selected to match the requirements of the crystal or resonator. CL1 and CL2 are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2. Load capacitance CL has the following formula: CL = CL1 x CL2 / (CL1 + CL2) + Cstray where Cstray is the pin capacitance and board or trace PCB-related capacitance. Typically, it is between 2 pF and 7 pF. Caution: To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended to use a resonator with a load capacitance CL ≤ 7 pF. Never use a resonator with a load capacitance of 12.5 pF. Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF, then CL1 = CL2 = 8 pF. Figure 18. Typical application with a 32.768 kHz crystal 5.3.7 Internal clock source characteristics The parameters given in Table 25 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. High-speed internal (HSI) RC oscillator Table 25. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = –40 to 85 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 8 - MHz DuCy(HSI) Duty cycle - 45 - 55 % ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) -- 1(3) % Factory- calibrated(4) TA = –40 to 105 °C –2 - 2.5 % TA = –10 to 85 °C –1.5 - 2.2 % TA = 0 to 70 °C –1.3 - 2 % TA = 25 °C –1.1 - 1.8 % tsu(HSI)(4) HSI oscillator startup time -1 - 2 µs IDD(HSI)(4) HSI oscillator power consumption - - 80 100 µA |
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