STM32F410RB datasheet(71/142 Pages) STMICROELECTRONICS

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STM32F410x8/B

Electrical characteristics

118

Table 33. Typical and maximum current consumption in Standby mode - VDD= 3.6 V

Symbol

Parameter

Conditions

Typ

Max

Uni

TA =

25 °C

TA =

25 °C(1)

TA =

85 °C

TA =

105 °C(1)

TA =

125 °C(1)

IDD_STBY

Supply current

in Standby

mode

Low-speed oscillator (LSE)

and RTC ON

3.4

4.3

8.9

22.8

65.0

µA

RTC and LSE OFF

2.5

3.3(2)

7.8

21.6(3)

64.0(2)

1. Guaranteed by characterization, unless otherwise specified.

2. Guaranteed by tests in production.

3. Guaranteed by test in production on temperature range 7 salestypes only.

Table 34. Typical and maximum current consumptions in VBAT mode

(LSE and RTC ON, LSE low- drive mode)

Symbol Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA =

85 °C

TA =

105 °C

TA =

125 °C

VBAT=

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain

supply

current

Low-speed oscillator (LSE in

low-drive mode) and RTC ON

0.7

0.8

1.1

2.8

4.2

5.6

µA

Low-speed oscillator (LSE in

high-drive mode) and RTC ON

1.4

1.6

1.9

4.2

7.0

8.6

RTC and LSE OFF

0.1

2.0

4.0

5.8

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization.

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