STM32F410RB datasheet(83/142 Pages) STMICROELECTRONICS

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STM32F410x8/B

Electrical characteristics

118

6.3.9

Internal clock source characteristics

The parameters given in Table 42 and Table 43 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 15.

High-speed internal (HSI) RC oscillator

Figure 23. ACCHSI versus temperature

1. Guaranteed by characterization.

Table 42. HSI oscillator characteristics (1)

1. VDD = 3.3 V, TA = –40 to 125 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

2. Guaranteed by design.

Factory-

calibrated

TA = –40 to 125 °C(3)

3. Guaranteed by characterization.

–8

5.5

TA = –10 to 85 °C(3)

–4

TA = 25 °C(4)

4. Factory calibrated non-soldered parts.

–1

tsu(HSI)(2)

HSI oscillator

startup time

2.2

µs

IDD(HSI)(2)

HSI oscillator

power consumption

µA

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