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NAND01GR3A 데이터시트(PDF) 37 Page - STMicroelectronics |
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NAND01GR3A 데이터시트(HTML) 37 Page - STMicroelectronics |
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37 / 57 page ![]() 37/57 NAND128-A, NAND256-A, NAND512-A, NAND01G-A Table 20. AC Characteristics for Command, Address, Data Input Note: 1. If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns. Symbol Alt. Symbol Parameter 1.8V Devices 3V Devices Unit tALLWL tALS Address Latch Low to Write Enable Low AL Setup time Min 0 0 ns tALHWL Address Latch High to Write Enable Low tCLHWL tCLS Command Latch High to Write Enable Low CL Setup time Min 0 0 ns tCLLWL Command Latch Low to Write Enable Low tDVWH tDS Data Valid to Write Enable High Data Setup time Min 20 20 ns tELWL tCS Chip Enable Low to Write Enable Low E Setup time Min 0 0 ns tWHALH tALH Write Enable High to Address Latch High AL Hold time Min 10 10 ns tWHALL Write Enable High to Address Latch Low tWHCLH tCLH Write Enable High to Command Latch High CL hold time Min 10 10 ns tWHCLL Write Enable High to Command Latch Low tWHDX tDH Write Enable High to Data Transition Data Hold time Min 10 10 ns tWHEH tCH Write Enable High to Chip Enable High E Hold time Min 10 10 ns tWHWL tWH Write Enable High to Write Enable Low W High Hold time Min 20 15 ns tWLWH tWP Write Enable Low to Write Enable High W Pulse Width Min 40 25(1) ns tWLWL tWC Write Enable Low to Write Enable Low Write Cycle time Min 60 50 ns |
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