| 전자부품 데이터시트 검색엔진 |
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ATSAMB11XR 데이터시트(PDF) 50 Page - Microchip Technology |
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ATSAMB11XR 데이터시트(HTML) 50 Page - Microchip Technology |
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50 / 87 page ![]() Parameter Condition Min. Typ. Max. Unit INL(2) 100 KSPS. Internal VREF=1.6V. Same result for external VREF. -2 +2.5 LSB THD 1 kHz sine input at 100 KSPS 73 dB SINAD 1 kHz sine input at 100 KSPS 62.5 dB SFDR 1 kHz sine input at 100 KSPS 73.7 dB Conversion time 13 cycles Current consumption Using external VREF, at 100 KSPS 13.5 µA Using internal VREF, at 100 KSPS 25.0 µA Using external VREF, at 1 MSPS 94 µA Using internal VREF, at 1MSPS 150 µA Using internal VREF, during VBAT monitoring 100 µA Using internal VREF, during temperature monitoring 50 µA Internal reference voltage Mean value using VBAT = 2.5V 1.026 (1) V Standard deviation across parts 10.5 mV VBAT Sensor Accuracy Without calibration -55 +55 mV With offset and gain calibration -17 +17 mV Temperature Sensor Accuracy Without calibration -9 +9 ºC With offset calibration -4 +4 ºC Note: 1. Effective VREF is 2xInternal Reference Voltage. 2. These values are characterized for 0x4000F404<28:29>: 0x03 and with Vin in the range 0.25 VBAT to 0.75 VBAT. If Vin is to be used beyond this range, configure 0x4000F404<28:29> with value = 0x00. 10.8 ADC Typical Characteristics TC = 25ºC and VBAT = 3.0V, unless otherwise noted. ATSAMB11XR/ZR © 2017 Microchip Technology Inc. Datasheet Preliminary DS70005342A-page 50 |
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