MMPF0100Z datasheet(74/128 Pages) NXP

74 / 128 page

NXP Semiconductors

PF0100Z

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.5.2

SWBST external components

6.4.5.3

SWBST specifications

Table 88. SWBST external component requirements

Components

Description

Values

CINBST(59)

SWBST input capacitor

μF

CINBSTHF(59)

SWBST decoupling input capacitor

0.1

μF

COBST(59)

SWBST output capacitor

2 x 22

μF

LSBST

SWBST inductor

2.2

μH

DBST

SWBST boost diode

1.0 A, 20 V Schottky

Notes

59.

Use X5R or X7R capacitors.

Table 89. SWBST electrical specifications

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V,

ISWBST = 100 mA, typical external component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at

VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, and 25 °C, unless otherwise noted.

Symbol

Parameters

Min.

Typ.

Max.

Units

Notes

Switch mode supply SWBST

VINSWBST

Input voltage range

2.8

–

4.5

VSWBST

Nominal output voltage

–

Table 87

–V

VSWBSTACC

Output voltage accuracy

2.8 V

≤ VIN ≤ 4.5 V

0 < ISWBST < ISWBSTMAX

-4.0

–

3.0

ΔVSWBST

Output ripple

2.8 V

≤ VIN ≤ 4.5 V

0 < ISWBST < ISWBSTMAX, excluding reverse recovery of Schottky

diode

–

120

mV Vp-p

VSWBSTLOR

DC load regulation

0 < ISWBST < ISWBSTMAX

–0.5

–

mV/mA

VSWBSTLIR

DC line regulation

2.8 V

≤ VIN ≤ 4.5 V, ISWBST = ISWBSTMAX

–

ISWBST

Continuous load current

2.8 V

≤ VIN ≤ 3.0 V

3.0 V

≤ VIN ≤ 4.5 V

–

500

600

ISWBSTQ

Quiescent current

auto

–

222

289

μA

RDSONBST

MOSFET on resistance

–

206

306

ISWBSTLIM

Peak current limit

1400

2200

3200

(60)

VSWBSTOSH

Start-up overshoot

ISWBST = 0.0 mA

–

500

VSWBSTTR

Transient load response

ISWBST from 1.0 mA to 100 mA in 1.0 µs

Maximum transient amplitude

–

300

VSWBSTTR

Transient load response

ISWBST from 100 mA to 1.0 mA in 1.0 µs

Maximum transient amplitude

–

300

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