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GD25B256DFIS 데이터시트(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

부품명 GD25B256DFIS
상세설명  3.3V Uniform Sector Dual and Quad Serial Flash
PDF  82 Pages
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제조업체  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
홈페이지  http://www.gigadevice.com/
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GD25B256DFIS 데이터시트(HTML) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B256D
46
Figure 47 64KB Block Erase Sequence Diagram (ADS=0)
Figure 48 64KB Block Erase Sequence Diagram (ADS=1)
Figure 49 64KB Block Erase with 4-Byte Address Sequence Diagram (ADS=0 or ADS=1)
7.20.
Chip Erase (CE) (60/C7H)
The Chip Erase (CE) command is erased the all data of the chip. A Write Enable (WREN) command must previously
have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by driving CS# Low,
followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence.
The Chip Erase command sequence: CS# goes low  sending Chip Erase command  CS# goes high. CS# must
be driven high after the eighth bit of the command code has been latched in; otherwise the Chip Erase command is not
executed. As soon as CS# is driven high, the self-timed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip
Erase cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write
in Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At some unspecified time
before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip Erase (CE) command is ignored if one
or more sectors/blocks are protected.
Figure 50 Chip Erase Sequence Diagram
Command
0
1
2
3
4
5
6
7
60H or C7H
CS#
SCLK
SI
Command
0
1
2
3
4
5
6
7
D8H
CS#
SCLK
SI
8
9
29 30 31
MSB
2
1
0
24 Bits Address
23 22
Command
0
1
2
3
4
5
6
7
D8H
CS#
SCLK
SI
8
9
37 38 39
MSB
2
1
0
32 Bits Address
31 30
Command
0
1
2
3
4
5
6
7
DCH
CS#
SCLK
SI
8
9
37 38 39
MSB
2
1
0
32 Bits Address
31 30



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