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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32F722IC 데이터시트(PDF) 136 Page - STMicroelectronics |
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STM32F722IC 데이터시트(HTML) 136 Page - STMicroelectronics |
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136 / 229 page  Electrical characteristics STM32F722xx STM32F723xx 136/229 DS11853 Rev 6 6.3.10 Internal clock source characteristics The parameters given in Table 42 and Table 43 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. High-speed internal (HSI) RC oscillator Figure 41. ACCHSI versus temperature 1. Guaranteed by characterization results. Table 42. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA MSv41055V1 -8 -6 -4 -2 0 2 4 6 -40 0 25 55 85 105 125 TA (°C) Min Max Typical |
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