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STM32F722IC 데이터시트(PDF) 184 Page - STMicroelectronics |
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STM32F722IC 데이터시트(HTML) 184 Page - STMicroelectronics |
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184 / 229 page ![]() Electrical characteristics STM32F722xx STM32F723xx 184/229 DS11853 Rev 6 Synchronous waveforms and timings Figure 66 through Figure 69 represent synchronous waveforms and Table 101 through Table 104 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: • BurstAccessMode = FMC_BurstAccessMode_Enable; • MemoryType = FMC_MemoryType_CRAM; • WriteBurst = FMC_WriteBurst_Enable; • CLKDivision = 1; • DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM • CL = 30 pF on data and address lines. CL = 10 pF on FMC_CLK unless otherwise specified. In all timing tables, the THCLK is the HCLK clock period. –For 2.7 V≤ VDD≤ 3.6 V, maximum FMC_CLK = 108 MHz at CL=20 pF or 90 MHz at CL=30 pF (on FMC_CLK). –For 1.71 V≤ VDD<2.7 V, maximum FMC_CLK = 70 MHz at CL=10 pF (on FMC_CLK). 1. Guaranteed by characterization results. Table 100. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1) 1. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9Thclk - 1 9Thclk + 1 ns tw(NWE) FMC_NWE low time 7Thclk -0.5 7Thclk + 0.5 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6Thclk + 2 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4Thclk - 1 - |
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