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LT8253EUFDM 데이터시트(PDF) 13 Page - Analog Devices

부품명 LT8253EUFDM
상세설명  40V USB Type-C Power Delivery Buck-Boost Controller
PDF  20 Pages
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LT8253/LT8253A
13
Rev. 0
For more information www.analog.com
APPLICATIONS INFORMATION
Slope compensation provides stability in constant fre-
quency current mode control by preventing subharmonic
oscillations at certain duty cycles. The minimum induc-
tance required for stability when duty cycles are larger
than 50% can be calculated as:
L
>
10 • VOUT • RSENSE
f
For high efficiency, choose an inductor with low core loss,
such as ferrite. Also, the inductor should have low DC
resistance to reduce the I2R losses, and must be able to
handle the peak inductor current without saturating. To
minimize radiated noise, use a shielded inductor.
RSENSE Selection and Maximum Output Current
RSENSE is chosen based on the required output current.
The duty cycle independent maximum current sense
thresholds (50mV in peak-buck and 50mV in peak-boost)
set the maximum inductor peak current in buck region,
buck-boost region, and boost region.
In boost region, the lowest maximum average load cur-
rent happens at VIN(MIN) and can be calculated as:
IOUT(MAX _BOOST) =
50mV
RSENSE
� IL(BOOST)
2
֥
VIN(MIN)
VOUT
where ∆IL(BOOST) is peak-to-peak inductor ripple current
in boost region and can be calculated as:
� IL(BOOST) =
VIN(MIN) • VOUT � VIN(MIN)
(
)
f • L • VOUT
In buck region, the lowest maximum average load current
happens at VIN(MAX) and can be calculated as:
IOUT(MAX _BUCK) =
50mV
RSENSE
� IL(BUCK)
2
÷
where ∆IL(BUCK) is peak-to-peak inductor ripple current in
buck region and can be calculated as:
� IL(BUCK) =
VOUT • VIN(MAX) � VOUT
(
)
f • L • VIN(MAX)
The maximum current sense RSENSE in boost region is:
RSENSE(BOOST) =
2 • 50mV • VIN(MIN)
2 • IOUT(MAX) • VOUT + � IL(BOOST) • VIN(MIN)
The maximum current sense RSENSE in buck region is
RSENSE(BUCK) =
2 • 50mV
2 • IOUT(MAX) + � IL(BUCK)
The final RSENSE value should be lower than the calculated
RSENSE in both buck and boost regions. A 20% to 30%
margin is usually recommended. Always choose a low
ESL current sense resistor.
Power MOSFET Selection
The LT8253/LT8253A require four external N-channel
power MOSFETs, two for the top switches (switches A
and D shown in Figure 1) and two for the bottom switches
(switches B and C shown in Figure 1). Important param-
eters for the power MOSFETs are the breakdown volt-
age VBR(DSS), threshold voltage VGS(TH), on-resistance
RDS(ON), reverse transfer capacitance CRSS and maximum
current IDS(MAX).
To achieve 2MHz operation, the power MOSFET selec-
tion is critical. With typical 25ns shoot-through protection
deadtime, high performance power MOSFETs with low Qg
and low RDS(ON) must be used.
Since the gate drive voltage is set by the 5V INTVCC supply,
logic-level threshold MOSFETs must be used in LT8253/
LT8253A applications. Switching four MOSFETs at higher
frequency like 2MHz, the substantial gate charge current
from INTVCC can be estimated as:
IINTVCC = f • QgA +QgB +QgC +QgD
(
)
where:
f is the switching frequency
QgA, QgB, QgC, QgD are the total gate charges of
MOSFETs A, B, C, D
Make sure the total required INTVCC current does not
exceed the INTVCC current limit in the datasheet. Typically,
MOSFETs with less than 10nC Qg are recommended.



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