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ADRF5132BCPZN-R7 데이터시트(PDF) 3 Page - Analog Devices

부품명 ADRF5132BCPZN-R7
상세설명  High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz
PDF  12 Pages
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ADRF5132BCPZN-R7 데이터시트(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5132
Rev. B | Page 3 of 12
SPECIFICATIONS
VDD = 5 V, VCTL = 0 V or VDD, TA = 25°C, and 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
0.7
5.0
GHz
INSERTION LOSS
0.9 GHz
0.5
dB
2.7 GHz
0.6
dB
3.8 GHz
0.65
dB
5.0 GHz
0.9
dB
ISOLATION
RFC to RF1/RF2 (Worst Case)
0.7 GHz to 2.0 GHz
50
dB
2.0 GHz to 5.0 GHz
45
dB
RF1 to RF2 (Worst Case)
0.7 GHz to 2.0 GHz
50
dB
2.0 GHz to 5.0 GHz
35
dB
RETURN LOSS
RFC
0.7 GHz to 4.0 GHz
25
dB
4.0 GHz to 5.0 GHz
15
dB
RFC to RF1/RF2
0.7 GHz to 4.0 GHz
25
dB
4.0 GHz to 5.0 GHz
15
dB
SWITCHING SPEED
Rise and Fall Time (tRISE, tFALL)
90% to 10% of radio frequency (RF) output
140
ns
On and Off Time (tON, tOFF)
50% VCTL to 10% to 90% of RF output
550
ns
INPUT POWER
0.1 dB Compression (P0.1dB)
42.5
dB
INPUT THIRD-ORDER INTERCEPT (IP3)
Two-tone input power = 30 dBm per tone at 10 MHz tone spacing
0.7 GHz to 2.0 GHz
68
dBm
2.0 GHz to 4.0 GHz
65
dBm
4.0 GHz to 5.0 GHz
62
dBm
RECOMMENDED OPERATING CONDITIONS
0.7 GHz to 4.0 GHz
Bias Voltage Range (VDD)
4.5
5.4
V
Control Voltage Range (VCTL)
0
VDD
V
Maximum RF Input Power
TCASE = 105°C1
Continuous wave (CW)
38
dBm
8 dB peak average ratio (PAR), long-term (>10 years operation),
average
35
dBm
8 dB PAR LTE, single event (<10 sec), average
41
dBm
TCASE = 85°C
CW
40
dBm
8 dB PAR LTE, long-term (>10 years operation), average
35
dBm
8 dB PAR LTE, single event (<10 sec), average
41
dBm
TCASE = 25°C
CW
43
dBm
8 dB PAR LTE, long-term (>10 years operation), average
35
dBm
8 dB PAR LTE, single event (<10 sec), average
41
dBm
Case Temperature Range (TCASE)
−40
+105
°C
DIGITAL INPUT CONTROL VOLTAGE
VDD = 4.5 V to 5.4 V, TCASE = −40°C to +105°C, at <1 µA typical
Low (VIL)
0
0.8
V
High (VIH)
1.3
5.0
V
SUPPLY CURRENT (IDD)
VDD = 5 V
1.1
mA
1
Peak power is 43 dBm, corresponding to PAR of 8 dB at LTE long-term.



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