High Power, 20 W Peak, Silicon SPDT,

Reflective Switch, 0.7 GHz to 5.0 GHz

Data Sheet

ADRF5132

Rev. B

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FEATURES

Reflective, 50 Ω design

Low insertion loss: 0.6 dB typical at 2.7 GHz

Long-term (>10 years operation)

Peak power: 43 dBm

CW power: 38 dBm

LTE power average (8 dB PAR): 35 dBm

Single event (<10 sec operation)

LTE power average (8 dB PAR): 41 dBm

High linearity

P0.1dB: 42.5 dBm typical

IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz

ESD ratings

HBM: 2 kV, Class 2

CDM: 1.25 kV

Single positive supply: 5 V

Positive control, CMOS/TTL compatible

16-lead, 3 mm × 3 mm LFCSP package

APPLICATIONS

Cellular/4G infrastructure

Wireless infrastructure

Military and high reliability applications

Test equipment

Pin diode replacement

FUNCTIONAL BLOCK DIAGRAM

12

11

10

1

3

4

9

2

GND

RF1

NIC

GND

GND

RF2

NIC

GND

ADRF5132

Figure 1.

GENERAL DESCRIPTION

The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz,

silicon, single-pole, double-throw (SPDT) reflective switch in a

leadless, surface-mount package. The switch is ideal for high

power and cellular infrastructure applications, like long-term

evolution (LTE) base stations. The ADRF5132 has high power

handling of 35 dBm LTE (average typical at 105°C), a low insertion

loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm

(typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.

The on-chip circuitry operates at a single, positive supply

voltage of 5 V and a typical supply current of 1.1 mA typical,

making the ADRF5132 an ideal alternative to pin diode-based

switches.

The device is in a RoHS compliant, compact, 16-lead, 3 mm ×

3 mm LFCSP package.