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NAND01GR3B 데이터시트(PDF) 58 Page - STMicroelectronics

부품명 NAND01GR3B
상세설명  1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  64 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

NAND01GR3B 데이터시트(HTML) 58 Page - STMicroelectronics

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DC And AC parameters
NAND01G-B, NAND02G-B
58/64
Figure 35.
Resistor Value Versus Waveform Timings For Ready/Busy Signal
1.
T = 25°C.
11.2
Data Protection
The ST NAND device is designed to guarantee Data Protection during Power Transitions.
A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold.
In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept
low (VIL) to guarantee hardware protection during power transitions as shown in the below
figure.
Figure 36.
Data Protection
ai07565B
RP (KΩ)
12
3
4
100
300
200
1
2
3
1.7
0.85
30
1.7
1.7
1.7
1.7
tr
tf
ibusy
0
400
4
RP (KΩ)
12
3
4
100
300
200
1
2
3
2.4
1.2
0.8
0.6
100
200
300
400
3.6
3.6
3.6
3.6
0
400
4
VDD = 1.8V, CL = 30pF
VDD = 3.3V, CL = 100pF
60
90
120
0.57
0.43
Ai11086
VLKO
VDD
W
Nominal Range
Locked
Locked



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