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NAND01GR3B 데이터시트(PDF) 44 Page - STMicroelectronics |
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NAND01GR3B 데이터시트(HTML) 44 Page - STMicroelectronics |
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44 / 64 page ![]() Program and Erase Times and Endurance cycles NAND01G-B, NAND02G-B 44/64 9 Program and Erase Times and Endurance cycles The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 18. Table 18. Program, Erase Times and Program Erase Endurance Cycles Parameters NAND Flash Unit Min Typ Max Page Program Time 300 700 µs Block Erase Time 2 3ms Program/Erase Cycles (per block) 100,000 cycles Data Retention 10 years |
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