NAND01GR3B datasheet(20/64 Pages) STMICROELECTRONICS

20 / 64 page

Bus operations

NAND01G-B, NAND02G-B

20/64

4.4

Data Output

Data Output bus operations are used to read: the data in the memory array, the Status

Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low,

and Command Latch Enable is Low. The data is output sequentially using the Read Enable

signal.

See Figure 26 and Table 25 for details of the timings requirements.

4.5

Write Protect

Write Protect bus operations are used to protect the memory against program or erase

operations. When the Write Protect signal is Low the device will not accept program or erase

operations and so the contents of the memory array cannot be altered. The Write Protect

signal is not latched by Write Enable to ensure protection even during power-up.

4.6

Standby

When Chip Enable is High the memory enters Standby mode, the device is deselected,

outputs are disabled and power consumption is reduced.

Table 5.

Bus Operations

Bus Operation

I/O0 - I/O7

I/O8 - I/O15(1)

1. Only for x16 devices.

Command Input

VIL

VIH

Rising

X(2)

2. WP must be VIH when issuing a program or erase command.

Command

Address Input

VIL

VIH

VIL

VIH

Rising

Address

Data Input

VIL

VIH

Rising

VIH

Data Input

Data Output

VIL

Fallin

VIH

Data Output

Write Protect

VIL

Standby

VIH

VIL/VD

Table 6.

Address Insertion, x8 Devices

Bus Cycle(1)

Any additional address input cycles will be ignored.

I/O7

I/O6

I/O5

I/O4

I/O3

I/O2

I/O1

I/O0

1st

2nd

VIL

A11

A10

3rd

A19

A18

A17

A16

A15

A14

A13

A12

4th

A27

A26

A25

A24

A23

A22

A21

A20

5th(2)

The fifth cycle is valid for 2Gb devices. A28 is for 2Gb devices only.

VIL

A28

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