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NAND01GR3B 데이터시트(PDF) 35 Page - STMicroelectronics |
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NAND01GR3B 데이터시트(HTML) 35 Page - STMicroelectronics |
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35 / 64 page ![]() NAND01G-B, NAND02G-B Device operations 35/64 6.9 Read Electronic Signature The device contains a Manufacturer Code and Device Code. To read these codes three steps are required: 1. one Bus Write cycle to issue the Read Electronic Signature command (90h) 2. one Bus Write cycle to input the address (00h) 3. four Bus Read Cycles to sequentially output the data (as shown in Table 14: Electronic Signature). Table 14. Electronic Signature Part Number Byte/Word 1 Byte/Word 2 Byte/Word 3 Byte/Word 4 Manufacturer Code Device code NAND01GR3B 20h A1h Reserved 80h Page Size Spare Area size Sequential Access Time Block Size Organization (see Table 15) NAND01GW3B F1h NAND01GR4B 0020h B1h NAND01GW4B C1h NAND02GR3B 20h AAh NAND02GW3B DAh NAND02GR4B 0020h BAh NAND02GW4B CAh Table 15. Electronic Signature Byte/Word 4 I/O Definition Value Description I/O1-I/O0 Page Size (Without Spare Area) 0 0 0 1 1 0 1 1 1K 2K Reserved Reserved I/O2 Spare Area Size (Byte / 512 Byte) 0 1 8 16 I/O3 Sequential Access Time 0 1 Standard (50 ns) Fast (30 ns) I/O5-I/O4 Block Size (Without Spare Area) 0 0 0 1 1 0 1 1 64K 128K 256K Reserved I/O6 Organization 0 1 X8 X16 I/O7 Not Used Reserved |
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