M69KB096AA datasheet(23/48 Pages) STMICROELECTRONICS

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M69KB096AA

Table 12. Capacitance

Note: 1. These parameters are not fully tested.

Table 13. DC Characteristics

Note: 1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to

drive the output capacitance expected in the actual system.

2. ISB(Max) values are measured with RCR2 to RCR0 bits set to ‘000’ (full array refresh) and RCR6 to RCR5 bits set to ‘11’ (temper-

ature compensated refresh threshold at +85°C). In order to achieve low standby current, all inputs must be driven either to VCCQ

or VSS. ISB may be slightly higher for up to 500 ms after power-up or when entering Standby mode.

3. The Operating Temperature is +25°C.

Symbol

Parameter

Test

Condition

Min

Max

Unit

CIN1

Address Input Capacitance

VIN = 0V

6pF

CIO

Data Input/Output Capacitance

VIO = 0V

6pF

Symbol

Parameter

Test Condition

Min.

Typ

Max.

Unit

ICC1

(1)

Operating Current:

Asynchronous Random

Read/Write

VIN =VIH or VIL,

E = VIL,

IOUT = 0mA

70ns

85ns

ICC1P

(1)

Operating Current:

Asynchronous Page

Read

70ns

85ns

ICC2

(1)

Operating Current:

Initial Access,

Burst Read/Write

80MHz

66MHz

ICC3R

(1)

Operating Current:

Continuous Burst Read

80MHz

66MHz

ICC3W

(1)

Operating Current:

Continuous Burst Write

80MHz

66MHz

ISB

(2)

VCC Standby Current

VIN = VCCQ or 0V,

E = VIH

120

µA

ILI

Input Leakage Current

≤VIN ≤VCC

1µA

ILO

Output Leakage Current

G = VIH or E = VIH

1µA

IZZ

(3)

Deep-Power Down

Current

VIN = VIH or VIL

µA

VIH

Input High Voltage

1.4

VCCQ + 0.2

VIL

Input Low Voltage

–0.2

0.4

VOH

Output High Voltage

IOH = –0.2mA

0.8VCCQ

VOL

Output Low Voltage

IOL = 0.2mA

0.2VCCQ

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