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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AS3956 데이터시트(PDF) 11 Page - ams AG |
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AS3956 데이터시트(HTML) 11 Page - ams AG |
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11 / 107 page  ams Datasheet Page 11 [v1-11] 2018-Nov-14 Document Feedback AS3956 − Electrical Characteristics Figure 9: CMOS Outputs MISO and IRQ Note(s): 1. Pull down can be enabled while MISO output is in tristate when /SS is high. The activation is controlled by register setting miso_pd1. Electrical Specifications Figure 10: Electrical Specifications (temperature 25°C unless noted otherwise) Symbol Parameter Min Typ Max Unit Note VOH High level output voltage 0.85 * VDD_IO V Isource=1mA VP_IO = 5.5V VOL Low level output voltage 0.15 * VDD_IO V RO Output resistance 200 400 Ω RPD Pull-down resistance pad MISO 10 kΩ See note (1) Symbol Parameter Min Typ Max Unit Note ISB_SPI Stand by consumption on VP_IO <1 μA @ 25°C (RF field not applied) VP_IO=1.8V VLIM Limiter voltage 5.5 6.0 V ILC=30mA (DC) (1) IS Supply current 450 μA See note (2) VHF_PON HF_PON threshold (rising VP_INT) power modes 0,3 2.7 V Rectified RF supply voltage VPON_HY HF_PON hysteresis 0.5 V VMOD Modulator ON voltage drop across LC1 - LC2 1.3 2.6 V ILC=1mA (1) ILC=30mA (1) VP_IO=3.3V CRES Resonance capacitor 45 pF |
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