ST7LUS5 datasheet(100/124 Pages) STMICROELECTRONICS

100 / 124 page

Electrical characteristics

ST7LUS5, ST7LU05, ST7LU09

100/124

12.7

EMC (electromagnetic compatibilty) characteristics

Susceptibility tests are performed on a sample basis during product characterization.

12.7.1

Functional EMS (electromagnetic susceptibility)

Based on a simple running application on the product (toggling two LEDs through I/O ports),

the product is stressed by two electromagnetic events until a failure occurs (indicated by the

LEDs).

●

ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device

until a functional disturbance occurs. This test conforms with the IEC 1000-4-2

standard.

●

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100pF capacitor, until a functional disturbance occurs. This test

conforms with the IEC 1000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in the

table below based on the EMS levels and classes defined in application note AN1709.

IDD

Supply current(6)

Read / Write / Erase

modes

fCPU = 8 MHz, VDD = 5.5V

2.6

No Read/No Write mode

100

µA

Power down mode / HALT

0.1

TA = -40°C to 85°C, unless otherwise specified.

Up to 32 bytes can be programmed at a time.

Data based on reliability test results and monitored in production.

The data retention time increases when the TA decreases.

Design target value pending full product characterization.

Guaranteed by Design. Not tested in production.

Table 74.

EEPROM memory (ST7FLU09 only)

Symbol

Parameter

Conditions(1)

TA = -40°C to 125°C, unless otherwise specified.

Min

Typ

Max

Unit

VDD

Operating voltage for EEPROM

write/erase

Refer to operating range of

VDD with TA, Section 12.3

on page 92

3.0

5.5

tprog

Programming time for 1~32

bytes

510

tRET

(2)

Data based on reliability test results and monitored in production.

Data retention(3)

The data retention time increases when the TA decreases.

TA = +55°C

years

NRW

Write/erase cycles

TA = +25°C

300k

cycles

Table 73.

Flash program memory (continued)

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

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