M58LR128FT datasheet(81/82 Pages) STMICROELECTRONICS

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M58LR128FT, M58LR128FB

REVISION HISTORY

Table 45. Document Revision History

Date

Version

Revision Details

07-May-2003

0.1

First Issue

08-Mar-2004

0.2

Clear Status Register Command and Set Configuration Register Command clarified.

Table 15., Program, Erase Times and Endurance Cycles reformatted, and Buffer

Enhanced Factory Program timings added.

In Table 19., DC Characteristics - Currents, IDD1, IDD2, IDD3, IDD4, IDD6 and IDD,

values changed and 16 Word burst values added. VPP1 and VPPLK values modified

in Table 20., DC Characteristics - Voltages.

APPENDIX A., BLOCK ADDRESS TABLES reformatted. In APPENDIX

B., COMMON FLASH INTERFACE, 0 added in front of 2-digit offset values. Data

modified at address offset (P + 1D)h = 127h in Table 37., Burst Read Information.

Figure 29., Buffer Enhanced Factory Program Flowchart and Pseudo Code modified.

APPENDIX D., COMMAND INTERFACE STATE TABLES added.

Document promoted from Target Specification to Preliminary Data status.

10-Sep-2004

0.3

IDD6 values changed in Table 19., DC Characteristics - Currents.

Sub-section Name and Description at address offset 003h modified in Table 32., CFI

Query Identification String.

Figure 24., Program Suspend & Resume Flowchart and Pseudo Code and Figure

26., Erase Suspend & Resume Flowchart and Pseudo Code modified. Write to

Buffer and Program command renamed Buffer Program. Duplicate timings removed

from Figure 12., Synchronous Burst Read AC Waveforms and tKHTX timing line

modified. Table 43., Command Interface States - Lock Table, Next State modified.

Document status promoted from Preliminary Data to full Datasheet.

24-Sep-2004

1.0

Figure 24., Program Suspend & Resume Flowchart and Pseudo Code, Figure

25., Block Erase Flowchart and Pseudo Code and Figure 26., Erase Suspend &

Resume Flowchart and Pseudo Code modified. Small text changes.

M58LR128FT 데이터시트(PDF) 81 Page - STMicroelectronics