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M58LR128FT 데이터시트(PDF) 35 Page - STMicroelectronics

부품명 M58LR128FT
상세설명  128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
PDF  82 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LR128FT 데이터시트(HTML) 35 Page - STMicroelectronics

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M58LR128FT, M58LR128FB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 15. In the M58LR128FT/B the maximum num-
ber of Program/ Erase cycles depends on the
voltage supply used.
Table 15. Program, Erase Times and Endurance Cycles
Note: 1. TA = –40 to 85°C; VDD = 1.7V to 2.0V; VDDQ = 1.7V to 2.0V.
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
3. Excludes the time needed to execute the command sequence.
4. Average on entire device.
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
Erase
Parameter Block
(16 KWords)
Preprogrammed
0.65
1
2.5
s
Not Preprogrammed
0.8
2.5
s
Main Block (64
KWords)
Preprogrammed
1.4
3
4
s
Not Preprogrammed
1.8
4
s
Program(3)
Single Cell
Word Program
10
100
µs
Buffer Program
10
µs
Single Word
Word Program
10
100
µs
Buffer Program
10
µs
Buffer (32 Words) (Buffer Program)
320
µs
Main Block (64 KWords)
640
ms
Suspend Latency
Program
5
10
µs
Erase
5
25
µs
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
Erase
Parameter Block (16 KWords)
0.7
2.5
s
Main Block (64 KWords)
1.2
4
s
Program(3)
Single Cell
Word Program
10
100
µs
Single Word
Word Program
10
100
µs
Buffered Enhanced
Factory Program(4)
3.5
µs
Buffer (32
Words)
Word Program
320
µs
Buffered Enhanced
Factory Program(4)
100
µs
Main Block (64
KWords)
Word Program
640
ms
Buffered Enhanced
Factory Program(4)
200
ms
Bank (8 Mbits)
Word Program
5
s
Buffered Enhanced
Factory Program(4)
1.6
s
Program/Erase
Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles



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